Adjoint method for the optimization of insulated gate bipolar transistors
نویسندگان
چکیده
منابع مشابه
Failure Precursors for Insulated Gate Bipolar Transistors (IGBTs)
Failure precursors indicate changes in a measured variable that can be associated with impending failure. By identifying precursors to failure and by monitoring them, system failures can be predicted and actions can be taken to mitigate their effects. In this study, three potential failure precursor candidates, threshold voltage, transconductance, and collector-emitter ON voltage, are evaluated...
متن کاملInsulated Gate Bipolar Transistor (IGBT) Basics
IGBT Fundamentals The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance and large bipolar current-carrying capability. Many designers view IGBT as a device with MOS input characteristics and bipolar output characteristic that is a voltage-controlled bipolar device. To make use of the advantages of both Power MOSFET and BJT, the IGBT has been introdu...
متن کاملTransient 3D Heat Flow Analysis for High Power Insulated Gate Bipolar Transistors Using the Transmission Line Matrix
This paper presents a 3D transmission line matrix (TLM) implementation for the solution of transient heat flow in power devices. The miniaturization of electronic networks creates problems of heat dissipation. Good thermal management is therefore essential. Simulating power electronic systems presents peculiar challenges due to the need of detailed modeling of both circuitry and control algorit...
متن کاملModelling an Insulated Gate Bipolar Transistor Using Bond Graph Techniques
Simulators in power electronics are less developed than in other electronic fields. The main modelling methods are between the numerical simulation of semiconductor device equations that hardly simulate circuits, and equivalent circuit models that show poor accuracy. We propose the application of the bond graph techniques to model modular power semiconductor devices. Furthermore, the IGBT is a ...
متن کاملThree-Dimensional Insulated Gate Bipolar Transistor (IGBT) Development
A new insulated gate bipolar transistor structure, the 3D-IGBT, is presented. The 3D-IGBT utilizes selective epitaxial silicon to form a top contacted anode and still retain the cellular structure of vemcally oriented devices. The 3D-IGBT , unlike other fully integrable power devices, exploits the merits of cellular structure to increase its packing density and thus reduce its on-resistance per...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: AIP Advances
سال: 2019
ISSN: 2158-3226
DOI: 10.1063/1.5113764